Invention Grant
- Patent Title: Method for routing a chamfered substrate
- Patent Title (中): 路由倒角衬底的方法
-
Application No.: US12965135Application Date: 2010-12-10
-
Publication No.: US08357587B2Publication Date: 2013-01-22
- Inventor: Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sébastien Kerdiles
- Applicant: Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sébastien Kerdiles
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0958882 20091211
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
The invention relates to a method for routing a chamfered substrate, having applications in the field of electronics, optics, or optoelectronics, which involves depositing a layer of a protective material on a peripheral annular zone of the substrate preferably with the aid of a plasma, partially etching the protective material with the aid of a plasma, so as to preserve a protective ring of the deposited material on the front face of the substrate, this ring located at a distance from the edge of the substrate, so as to delimit an accessible peripheral annular zone, etching a thickness of the material constituting the substrate to be routed, preferably with the aid of a plasma that is level with the accessible peripheral annular zone of the substrate, and removing the ring of protective material preferably with the aid of a plasma.
Public/Granted literature
- US20110140244A1 METHOD FOR ROUTING A CHAMFERED SUBSTRATE Public/Granted day:2011-06-16
Information query
IPC分类: