Invention Grant
- Patent Title: Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
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Application No.: US12929856Application Date: 2011-02-22
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Publication No.: US08357594B2Publication Date: 2013-01-22
- Inventor: Sung-soo Park , Moon-sang Lee
- Applicant: Sung-soo Park , Moon-sang Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0015247 20100219; KR10-2010-0082085 20100824
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/205
Abstract:
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.
Public/Granted literature
- US20110204377A1 Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates Public/Granted day:2011-08-25
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