Invention Grant
- Patent Title: Method of forming a polycrystalline silicon layer and method of manufacturing thin film transistor
- Patent Title (中): 形成多晶硅层的方法和制造薄膜晶体管的方法
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Application No.: US13067407Application Date: 2011-05-31
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Publication No.: US08357596B2Publication Date: 2013-01-22
- Inventor: Seung-Kyu Park , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Yun-Mo Chung , Yong-Duck Son , Byung-Soo So , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Jong-Ryuk Park , Tak-Young Lee , Jae-Wan Jung
- Applicant: Seung-Kyu Park , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Yun-Mo Chung , Yong-Duck Son , Byung-Soo So , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Jong-Ryuk Park , Tak-Young Lee , Jae-Wan Jung
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0057111 20100616
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/336 ; H01L21/331
Abstract:
A method of crystallizing a silicon layer and a method of manufacturing a TFT, the method of crystallizing a silicon layer including forming a catalyst metal layer on a substrate; forming a catalyst metal capping pattern on the catalyst metal layer; forming a second amorphous silicon layer on the catalyst metal capping pattern; and heat-treating the second amorphous silicon layer to form a polycrystalline silicon layer.
Public/Granted literature
- US20110312135A1 Method of forming a polycrystalline silicon layer and method of manufacturing thin film transistor Public/Granted day:2011-12-22
Information query
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