Invention Grant
US08357597B2 Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer
有权
Si（1-v-w-x）CwAlxNv基材的制造方法，外延晶片的制造方法，Si（1-v-w-x）CwAlxNv母材，外延片
- Patent Title: Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer
- Patent Title (中): Si（1-v-w-x）CwAlxNv基材的制造方法，外延晶片的制造方法，Si（1-v-w-x）CwAlxNv母材，外延片
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Application No.: US12989039Application Date: 2009-04-17
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Publication No.: US08357597B2Publication Date: 2013-01-22
- Inventor: Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
- Applicant: Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2008-114467 20080424; JP2009-056915 20090310
- International Application: PCT/JP2009/057723 WO 20090417
- International Announcement: WO2009/131064 WO 20091029
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided. A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0
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