Invention Grant
- Patent Title: Compound semiconductor device and method of manufacturing the same
- Patent Title (中): 化合物半导体器件及其制造方法
-
Application No.: US12886822Application Date: 2010-09-21
-
Publication No.: US08357602B2Publication Date: 2013-01-22
- Inventor: Masahito Kanamura , Toshihide Kikkawa
- Applicant: Masahito Kanamura , Toshihide Kikkawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2009-230877 20091002
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/461
Abstract:
An intermediate layer composed of i-AlN is formed between a channel layer and an electron donor layer, a first opening is formed in an electron donor layer, at a position where a gate electrode will be formed later, while using an intermediate layer as an etching stopper, a second opening is formed in the intermediate layer so as to be positionally aligned with the first opening, by wet etching using a hot phosphoric acid solution, and a gate electrode is formed so that the lower portion thereof fill the first and second openings while placing a gate insulating film in between, and so that the head portion thereof projects above the cap structure.
Public/Granted literature
- US20110079771A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-04-07
Information query
IPC分类:
