Invention Grant
US08357613B2 Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing
有权
制造半导体器件和包括通过快速热退火处理的接触插塞的半导体器件的方法
- Patent Title: Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing
- Patent Title (中): 制造半导体器件和包括通过快速热退火处理的接触插塞的半导体器件的方法
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Application No.: US12656673Application Date: 2010-02-12
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Publication No.: US08357613B2Publication Date: 2013-01-22
- Inventor: Suk-Hun Choi , Chang-Ki Hong , Jae-Hyoung Choi , Yoon-Ho Son , Min-Young Park , Yong-Suk Tak
- Applicant: Suk-Hun Choi , Chang-Ki Hong , Jae-Hyoung Choi , Yoon-Ho Son , Min-Young Park , Yong-Suk Tak
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0011506 20090212
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of fabricating a semiconductor device includes depositing tungsten on an insulating layer in which a contact hole is formed by chemical vapor deposition (CVD), performing chemical mechanical planarization (CMP) on the tungsten to expose the insulating layer and form a tungsten contact plug, and performing rapid thermal oxidation (RTO) on the tungsten contact plug in an oxygen atmosphere such that the tungsten expands volumetrically into tungsten oxide (WξOψ).
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