Invention Grant
- Patent Title: Frequency doubling using a photo-resist template mask
- Patent Title (中): 使用光刻胶模板掩模倍频
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Application No.: US12257953Application Date: 2008-10-24
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Publication No.: US08357618B2Publication Date: 2013-01-22
- Inventor: Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
- Applicant: Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.
Public/Granted literature
- US20090111281A1 FREQUENCY DOUBLING USING A PHOTO-RESIST TEMPLATE MASK Public/Granted day:2009-04-30
Information query
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