Invention Grant
- Patent Title: Thermal infrared detecting device
- Patent Title (中): 热红外检测装置
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Application No.: US12346126Application Date: 2008-12-30
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Publication No.: US08357900B2Publication Date: 2013-01-22
- Inventor: Takahiro Onakado , Masashi Ueno
- Applicant: Takahiro Onakado , Masashi Ueno
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-001118 20080108; JP2008-116833 20080428; JP2008-284425 20081105
- Main IPC: G01J5/00
- IPC: G01J5/00

Abstract:
A thermal infrared imaging device includes a diode, a power supply for supplying a constant power supply voltage to an anode of the diode through a first interconnection, a voltage setting circuit for setting a voltage across the diode, and a current read circuit which is connected to a cathode of the diode through a second interconnection and the voltage setting circuit, for reading a current of the diode. The voltage setting circuit controls a voltage of a connection point of the second interconnection and the voltage setting circuit to a voltage obtained by subtracting a voltage drop from a predetermined bias voltage. The voltage drop is generated by resistances of the first and second interconnections, and the diode current.
Public/Granted literature
- US20090194698A1 THERMAL INFRARED DETECTING DEVICE Public/Granted day:2009-08-06
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