Invention Grant
- Patent Title: Silicon wafer and production method therefor
- Patent Title (中): 硅晶片及其制造方法
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Application No.: US12956160Application Date: 2010-11-30
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Publication No.: US08357939B2Publication Date: 2013-01-22
- Inventor: Katsuhiko Nakai
- Applicant: Katsuhiko Nakai
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: JP2009-299162 20091229
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/322 ; H01L21/84
Abstract:
A silicon wafer includes BMDs with a diagonal length of from 10 nm to 50 nm, and has a density of BMD which exists at a depth of 50 μm and deeper from the surface of the silicon wafer which is greater than or equal to 1×1011/cm3, and a ratio of the {111} plane of the BMD to the total planes surrounding the BMD, as an indication of the morphology of the BMD, is less than or equal to 0.3.
Public/Granted literature
- US20110156215A1 Silicone Wafer and Production Method Therefor Public/Granted day:2011-06-30
Information query
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