Invention Grant
- Patent Title: Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device
- Patent Title (中): 氮化物半导体发光器件，外延衬底和用于制造氮化物半导体发光器件的方法
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Application No.: US13189194Application Date: 2011-07-22
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Publication No.: US08357946B2Publication Date: 2013-01-22
- Inventor: Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
- Applicant: Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori
- Priority: JPP2009-013307 20090123; JPP2009-167084 20090715
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a hexagonal gallium nitride, an n-type gallium nitride-based semiconductor layer 15 including an InX1AlY1Ga1-X1-Y1N (0
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