Invention Grant
- Patent Title: Semiconductor light emitting device, semiconductor element, and method for fabricating the semiconductor light emitting device
- Patent Title (中): 半导体发光器件,半导体元件以及半导体发光器件的制造方法
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Application No.: US11646809Application Date: 2006-12-27
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Publication No.: US08357950B2Publication Date: 2013-01-22
- Inventor: Masahiro Ikehara
- Applicant: Masahiro Ikehara
- Applicant Address: JP Osaka-shi
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka-shi
- Agency: Morrison & Foerster LLP
- Priority: JP2005-376478 20051227; JP2006-288059 20061023
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
In the semiconductor light emitting device of the present invention, a reflective layer for reflecting light emitted by a semiconductor light emitting element is formed on a Cu wiring pattern, and a bonding section is formed on a light-emitting-element-mounting area on the Cu wiring pattern, to which an electrode of an LED chip is connected, the bonding section being made of a material allowing the semiconductor light emitting element to be soldered on the reflective layer without flux. Consequently, it is possible to realize a high-quality semiconductor light emitting device which has a semiconductor light emitting element firmly attached to a bonding surface and which is capable of emitting light while reducing deterioration in luminosity and color tone shift.
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