Invention Grant
US08357950B2 Semiconductor light emitting device, semiconductor element, and method for fabricating the semiconductor light emitting device 有权
半导体发光器件,半导体元件以及半导体发光器件的制造方法

  • Patent Title: Semiconductor light emitting device, semiconductor element, and method for fabricating the semiconductor light emitting device
  • Patent Title (中): 半导体发光器件,半导体元件以及半导体发光器件的制造方法
  • Application No.: US11646809
    Application Date: 2006-12-27
  • Publication No.: US08357950B2
    Publication Date: 2013-01-22
  • Inventor: Masahiro Ikehara
  • Applicant: Masahiro Ikehara
  • Applicant Address: JP Osaka-shi
  • Assignee: Sharp Kabushiki Kaisha
  • Current Assignee: Sharp Kabushiki Kaisha
  • Current Assignee Address: JP Osaka-shi
  • Agency: Morrison & Foerster LLP
  • Priority: JP2005-376478 20051227; JP2006-288059 20061023
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Semiconductor light emitting device, semiconductor element, and method for fabricating the semiconductor light emitting device
Abstract:
In the semiconductor light emitting device of the present invention, a reflective layer for reflecting light emitted by a semiconductor light emitting element is formed on a Cu wiring pattern, and a bonding section is formed on a light-emitting-element-mounting area on the Cu wiring pattern, to which an electrode of an LED chip is connected, the bonding section being made of a material allowing the semiconductor light emitting element to be soldered on the reflective layer without flux. Consequently, it is possible to realize a high-quality semiconductor light emitting device which has a semiconductor light emitting element firmly attached to a bonding surface and which is capable of emitting light while reducing deterioration in luminosity and color tone shift.
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