Invention Grant
US08357952B2 Power semiconductor structure with field effect rectifier and fabrication method thereof
有权
具有场效应整流器的功率半导体结构及其制造方法
- Patent Title: Power semiconductor structure with field effect rectifier and fabrication method thereof
- Patent Title (中): 具有场效应整流器的功率半导体结构及其制造方法
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Application No.: US13082365Application Date: 2011-04-07
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Publication No.: US08357952B2Publication Date: 2013-01-22
- Inventor: Kao-Way Tu
- Applicant: Kao-Way Tu
- Applicant Address: TW New Taipei
- Assignee: Great Power Semiconductor Corp.
- Current Assignee: Great Power Semiconductor Corp.
- Current Assignee Address: TW New Taipei
- Agency: Lai & Cai Intellectual Property (USA) Office
- Priority: TW99115353A 20100513
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/332 ; H01L21/336
Abstract:
A power semiconductor structure with a field effect rectifier having a drain region, a body region, a source region, a gate channel, and a current channel is provided. The body region is substantially located above the drain region. The source region is located in the body region. The gate channel is located in the body region and adjacent to a gate structure. The current channel is located in the body region and is extended from the source region downward to the drain region. The current channel is adjacent to a conductive structure coupled to the source region.
Public/Granted literature
- US20110278642A1 POWER SEMICONDUCTOR STRUCTURE WITH FIELD EFFECT RECTIFIER AND FABRICATION METHOD THEREOF Public/Granted day:2011-11-17
Information query
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