Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12805158Application Date: 2010-07-15
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Publication No.: US08357955B2Publication Date: 2013-01-22
- Inventor: Yoshinori Tanaka
- Applicant: Yoshinori Tanaka
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader Fishman & Grauer, PLLC
- Priority: JP2009-198547 20090828
- Main IPC: H01L27/06
- IPC: H01L27/06

Abstract:
Disclosed herein is a semiconductor integrated circuit, wherein a desired circuit is formed by combining and laying out a plurality of standard cells and connecting the cells together, of which the cell length, i.e., the gap between a pair of opposed sides, is standardized, the plurality of standard cells forming the desired circuit include complementary in-phase driven standard cells, each of which includes a plurality of complementary transistor pairs that are complementary in conductivity type to each other and have their gate electrodes connected together, and N (≧2) pairs of all the complementary transistor pairs are driven in phase, and the size of the standardized cell length of the complementary in-phase driven standard cell is defined as an M-fold cell length which is M (N≧M≧2) times the basic cell length which is appropriate to the single complementary transistor pair.
Public/Granted literature
- US20110049575A1 Semiconductor integrated circuit Public/Granted day:2011-03-03
Information query
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