Invention Grant
US08357957B2 FET-based sensor for detecting ionic material, ionic material detecting device using the FET-based sensor, and method of detecting ionic material using the FET-based sensor
有权
用于检测离子材料的基于FET的传感器,使用基于FET的传感器的离子材料检测装置以及使用基于FET的传感器检测离子材料的方法
- Patent Title: FET-based sensor for detecting ionic material, ionic material detecting device using the FET-based sensor, and method of detecting ionic material using the FET-based sensor
- Patent Title (中): 用于检测离子材料的基于FET的传感器,使用基于FET的传感器的离子材料检测装置以及使用基于FET的传感器检测离子材料的方法
-
Application No.: US12912191Application Date: 2010-10-26
-
Publication No.: US08357957B2Publication Date: 2013-01-22
- Inventor: Kyu-sang Lee , Kyu-tae Yoo , Jeo-young Shim , Jin-tae Kim , Yeon-ja Cho
- Applicant: Kyu-sang Lee , Kyu-tae Yoo , Jeo-young Shim , Jin-tae Kim , Yeon-ja Cho
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0002373 20060109
- Main IPC: H01L29/78
- IPC: H01L29/78

Abstract:
Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
Public/Granted literature
Information query
IPC分类: