Invention Grant
- Patent Title: Integrated CMOS porous sensor
- Patent Title (中): 集成CMOS多孔传感器
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Application No.: US13065293Application Date: 2011-03-18
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Publication No.: US08357958B2Publication Date: 2013-01-22
- Inventor: Timothy Cummins
- Applicant: Timothy Cummins
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: O'Keefe, Egan, Peterman & Enders LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/80 ; G01N27/02 ; G01N27/12 ; G01N27/22

Abstract:
A single chip wireless sensor comprises a microcontroller connected to a transmit/receive interface, which is coupled to a wireless antenna by an L-C matching circuit. The sensor senses gas or humidity and temperature. The device is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material with an organic polymer component is spun onto the wafer to form a top layer incorporating also sensing electrodes. This material is cured at 300° C., which is much lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in K, its dielectric constant, reducing to 2.9. The thermoset dielectric, while not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing.
Public/Granted literature
- US20110226041A1 Integrated CMOS porous sensor Public/Granted day:2011-09-22
Information query
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