Invention Grant
- Patent Title: Semiconductor device having multiple storage regions
- Patent Title (中): 具有多个存储区域的半导体器件
-
Application No.: US12005869Application Date: 2007-12-28
-
Publication No.: US08357965B2Publication Date: 2013-01-22
- Inventor: Hiroyuki Nansei
- Applicant: Hiroyuki Nansei
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2006-355026 20061228
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/788 ; H01L29/792 ; G11C11/34 ; G11C16/04 ; H01L21/336
Abstract:
One embodiment in accordance with the invention can include a semiconductor device that includes: a groove that is formed in a semiconductor substrate; bottom oxide films that are formed on both side faces of the groove; two charge storage layers that are formed on side faces of the bottom oxide films; top oxide films that are formed on side faces of the two charge storage layers; and a silicon oxide layer that is formed on the bottom face of the groove, and has a smaller film thickness than the top oxide films.
Public/Granted literature
- US20090020799A1 Semiconductor device and method of manufacturing the same Public/Granted day:2009-01-22
Information query
IPC分类:
