Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US12884764Application Date: 2010-09-17
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Publication No.: US08357966B2Publication Date: 2013-01-22
- Inventor: Aya Minemura , Kenji Sawamura , Mitsuhiro Noguchi
- Applicant: Aya Minemura , Kenji Sawamura , Mitsuhiro Noguchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-066950 20100323
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/8238
Abstract:
According to one embodiment, a semiconductor device comprises an active area extending in a first direction, a contact plug located on a first portion of the active area, and a transistor located on a second portion adjacent to the first portion of the active area in the first direction. A width of a top surface area of the first portion in a second direction perpendicular to the first direction is smaller than that of a top surface area of the second portion in the second direction.
Public/Granted literature
- US20110233622A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-09-29
Information query
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