Invention Grant
- Patent Title: Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device
- Patent Title (中): 宽带隙器件与具有比宽带隙器件更低的雪崩击穿电压和更高的正向压降的器件并联
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Application No.: US12974599Application Date: 2010-12-21
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Publication No.: US08357976B2Publication Date: 2013-01-22
- Inventor: Joseph A. Yedinak , Richard L. Woodin , Christopher L. Rexer , Praveen Muralheedaran Shenoy , Kwanghoon Oh , Chongman Yun
- Applicant: Joseph A. Yedinak , Richard L. Woodin , Christopher L. Rexer , Praveen Muralheedaran Shenoy , Kwanghoon Oh , Chongman Yun
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Hiscock & Barclay, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
An electrical device on a single semiconductor substrate includes: an open base vertical PNP transistor placed in parallel with a wide bandgap, high voltage diode wherein the PNP transistor has a P doped collector region, an N-doped base layer, an N doped buffer layer, and a P doped emitter layer.
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