Invention Grant
- Patent Title: Electronic device comprising a field effect transistor for high-frequency applications
- Patent Title (中): 电子设备包括用于高频应用的场效应晶体管
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Application No.: US10555054Application Date: 2004-04-28
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Publication No.: US08357979B2Publication Date: 2013-01-22
- Inventor: Thomas Christian Roedle , Hendrikus Ferdinand Franciscus Jos , Stephan Jo Cecile Henri Theeuwen , Petra Christina Anna Hammes , Radjindrepersad Gajadharsing
- Applicant: Thomas Christian Roedle , Hendrikus Ferdinand Franciscus Jos , Stephan Jo Cecile Henri Theeuwen , Petra Christina Anna Hammes , Radjindrepersad Gajadharsing
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP03101224 20030502
- International Application: PCT/IB2004/050543 WO 20040428
- International Announcement: WO2004/097941 WO 20041111
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in the back-off region under class AB signal operation.
Public/Granted literature
- US20060231905A1 Electronic device comprising a field effect transistor for high-frequency aplications Public/Granted day:2006-10-19
Information query
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