Invention Grant
- Patent Title: Plasmonic high-speed devices for enhancing the performance of microelectronic devices
-
Application No.: US11974746Application Date: 2007-10-15
-
Publication No.: US08357980B2Publication Date: 2013-01-22
- Inventor: R. Stanley Williams , David Fattal
- Applicant: R. Stanley Williams , David Fattal
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L31/101

Abstract:
Various embodiments of the present invention are directed to photonic devices that can be used to collect and convert incident ER into surface plasmons that can be used to enhance the operation of microelectronic devices. In one embodiment of the present invention, a photonic device comprises a dielectric layer having a top surface and a bottom surface, and a planar nanowire network covering at least a portion of the top surface of the dielectric layer. The bottom surface of the dielectric layer is positioned on the top surface of a substrate, and the planar nanowire network is configured to convert incident electromagnetic radiation into surface plasmons that penetrate through the dielectric layer and into at least a portion of the substrate.
Public/Granted literature
- US20090097798A1 Plasmonic high-speed devices for enhancing the performance of microelectronic devices Public/Granted day:2009-04-16
Information query
IPC分类: