According to one embodiment, a magnetic memory according to an embodiment includes a magnetoresistive effect element and a fourth magnetic layer which is provided on the side surface of the magnetoresistive effect element via an insulating film. The magnetoresistive effect element has a first magnetic layer of which the magnetization direction is variable, a second magnetic layer of which the magnetization direction fixed, a third magnetic layer of which the magnetization direction parallel to a film plane is variable, and an intermediate layer between the first magnetic layer and the second magnetic layer. The fourth magnetic layer collects a magnetic field generated from the end of the third magnetic layer.