Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12458139Application Date: 2009-07-01
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Publication No.: US08357990B2Publication Date: 2013-01-22
- Inventor: Masayuki Furumiya , Hiroaki Ohkubo , Yasutaka Nakashiba
- Applicant: Masayuki Furumiya , Hiroaki Ohkubo , Yasutaka Nakashiba
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-194929 20080729
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A width of a region where each of the N wells is in contact with the buried P well is not more than 2 μm. A ground voltage and a power supply voltage are applied to the P well and the N well, respectively. A decoupling capacitor is formed between the N well and the buried P well.
Public/Granted literature
- US20100025816A1 Semiconductor device Public/Granted day:2010-02-04
Information query
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