Invention Grant
US08357991B2 Semiconductor device having interconnect structure for MIM capacitor and fuse elements
有权
具有用于MIM电容器和熔丝元件的互连结构的半导体器件
- Patent Title: Semiconductor device having interconnect structure for MIM capacitor and fuse elements
- Patent Title (中): 具有用于MIM电容器和熔丝元件的互连结构的半导体器件
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Application No.: US12616942Application Date: 2009-11-12
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Publication No.: US08357991B2Publication Date: 2013-01-22
- Inventor: Daisuke Oshida , Hiroyuki Kunishima , Norio Okada
- Applicant: Daisuke Oshida , Hiroyuki Kunishima , Norio Okada
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2008-289531 20081112
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A semiconductor device includes an upper interconnect, a lower interconnect, insulating layers interposed between the upper interconnect and the lower interconnect, a connecting portion that is formed in the insulating layers and connects the upper interconnect and the lower interconnect, and an element that is placed in one of the insulating layers and has a conductive layer connected to the connecting portion. The connecting portion is formed over the lower interconnect and the end portions of the conductive layer of the element, and is in contact with the upper face of the lower interconnect and the upper faces and side faces of the end portions of the conductive layer of the element.
Public/Granted literature
- US20100117191A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-05-13
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