Invention Grant
US08357991B2 Semiconductor device having interconnect structure for MIM capacitor and fuse elements 有权
具有用于MIM电容器和熔丝元件的互连结构的半导体器件

Semiconductor device having interconnect structure for MIM capacitor and fuse elements
Abstract:
A semiconductor device includes an upper interconnect, a lower interconnect, insulating layers interposed between the upper interconnect and the lower interconnect, a connecting portion that is formed in the insulating layers and connects the upper interconnect and the lower interconnect, and an element that is placed in one of the insulating layers and has a conductive layer connected to the connecting portion. The connecting portion is formed over the lower interconnect and the end portions of the conductive layer of the element, and is in contact with the upper face of the lower interconnect and the upper faces and side faces of the end portions of the conductive layer of the element.
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