Invention Grant
- Patent Title: Current reference circuit utilizing a current replication circuit
- Patent Title (中): 利用电流复制电路的电流参考电路
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Application No.: US12859335Application Date: 2010-08-19
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Publication No.: US08358119B2Publication Date: 2013-01-22
- Inventor: Hyoung-Rae Kim
- Applicant: Hyoung-Rae Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0076635 20090819
- Main IPC: G05F3/16
- IPC: G05F3/16 ; G05F3/20

Abstract:
A current reference circuit includes a proportional-to-absolute temperature (PTAT) current generator, a band-gap reference circuit and a current replication circuit. The PTAT generator generates a PTAT current. The band-gap reference circuit generates a reference voltage based on the PTAT current and generates a second current by cancelling a first current from the PTAT current. The first current has a zero temperature coefficient and the second current has a positive temperature coefficient. The current replication circuit replicates the first current based on the PTAT current and the second current.
Public/Granted literature
- US20110043185A1 CURRENT REFERENCE CIRCUIT Public/Granted day:2011-02-24
Information query
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