Invention Grant
- Patent Title: Monolithic low impedance dual gate current sense MOSFET
- Patent Title (中): 单片低阻双栅极电流检测MOSFET
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Application No.: US13452697Application Date: 2012-04-20
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Publication No.: US08358157B2Publication Date: 2013-01-22
- Inventor: James E. Gillberg
- Applicant: James E. Gillberg
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Main IPC: H06K3/00
- IPC: H06K3/00

Abstract:
A power switch includes a first power transistor having a first source electrode, a first gate electrode, and a first drain electrode, and a second power transistor having a second source electrode, a second gate electrode, and a second drain electrode. The power switch further includes a first pilot transistor which has a third source electrode, a third gate electrode, and a third drain electrode. The first, second and third drain electrodes are electrically connected together. The first and second source electrodes are electrically connected together. The first and third gate electrodes are electrically connected together and can be biased independently from the second gate electrode. The first power transistor is the same size as or smaller than the second power transistor and the first power transistor is larger than the first pilot transistor.
Public/Granted literature
- US20120223745A1 MONOLITHIC LOW IMPEDANCE DUAL GATE CURRENT SENSE MOSFET Public/Granted day:2012-09-06
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