Invention Grant
- Patent Title: CMOS power amplifier
- Patent Title (中): CMOS功率放大器
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Application No.: US13173814Application Date: 2011-06-30
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Publication No.: US08358173B2Publication Date: 2013-01-22
- Inventor: Youn Suk Kim , Chul Hwan Yoon , Joong Jin Nam , Ki Joong Kim , Jun Goo Won
- Applicant: Youn Suk Kim , Chul Hwan Yoon , Joong Jin Nam , Ki Joong Kim , Jun Goo Won
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2010-0073640 20100729
- Main IPC: H03F3/16
- IPC: H03F3/16

Abstract:
A CMOS power amplifier includes: a first MOS transistor connected between a first power terminal and a first output stage and having a gate connected to an input stage; a second MOS transistor connected between the first output stage and a ground and having a gate connected to the input stage; a switching circuit unit connecting or separating a feedback line between the input stage and the first output stage to select a linear amplifying operation or a non-linear amplifying operation; and a resistor formed at the feedback line between the input stage and the first output stage to determine a linear amplification gain when the feedback line is turned on.
Public/Granted literature
- US20120025914A1 CMOS POWER AMPLIFIER Public/Granted day:2012-02-02
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