Invention Grant
- Patent Title: Low cost high density rectifier matrix memory
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Application No.: US12898205Application Date: 2010-10-05
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Publication No.: US08358525B2Publication Date: 2013-01-22
- Inventor: Daniel R. Shepard
- Applicant: Daniel R. Shepard
- Applicant Address: US MA N. Billerica
- Assignee: Contour Semiconductor, Inc.
- Current Assignee: Contour Semiconductor, Inc.
- Current Assignee Address: US MA N. Billerica
- Agency: Bingham McCutchen LLP
- Main IPC: G11C5/02
- IPC: G11C5/02
Abstract:
A high density memory device is fabricated three dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
Public/Granted literature
- US20110019455A1 LOW COST HIGH DENSITY RECTIFIER MATRIX MEMORY Public/Granted day:2011-01-27
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