Invention Grant
US08358536B2 Nonvolatile memory device and method with multiple verification pass voltages
失效
具有多个验证通过电压的非易失性存储器件和方法
- Patent Title: Nonvolatile memory device and method with multiple verification pass voltages
- Patent Title (中): 具有多个验证通过电压的非易失性存储器件和方法
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Application No.: US12763539Application Date: 2010-04-20
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Publication No.: US08358536B2Publication Date: 2013-01-22
- Inventor: In Soo Wang
- Applicant: In Soo Wang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0047829 20090529
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04
Abstract:
A nonvolatile memory device includes an operation voltage generation unit configured to generate a first pass voltage when a verification voltage is higher than a reference voltage and to generate a second pass voltage lower than the first pass voltage when the verification voltage is lower than the reference voltage.
Public/Granted literature
- US20100302865A1 NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2010-12-02
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