Invention Grant
- Patent Title: Write pre-compensation for nonvolatile memory
- Patent Title (中): 写入非易失性存储器的预补偿
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Application No.: US13251822Application Date: 2011-10-03
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Publication No.: US08358541B1Publication Date: 2013-01-22
- Inventor: Zining Wu , Xueshi Yang , Pantas Sutardja
- Applicant: Zining Wu , Xueshi Yang , Pantas Sutardja
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A system including a programming module and an interference module. The programming module is configured to determine a programming value to which a state of a target cell is to be programmed, wherein the programming value is determined based on states of one or more cells near the target cell. The interference module is configured to generate interference values based on (i) the state of the target cell and (ii) the states of the one or more cells near the target cell. The programming module is further configured to determine the programming value based on at least one of the interference values selected according to (i) the state of the target cell and (ii) the states of the one or more cells near the target cell.
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