Invention Grant
- Patent Title: Internal power supply circuit, semiconductor device, and manufacturing method of semiconductor device
- Patent Title (中): 内部电源电路，半导体器件和半导体器件的制造方法
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Application No.: US12787023Application Date: 2010-05-25
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Publication No.: US08358556B2Publication Date: 2013-01-22
- Inventor: Koichiro Hayashi
- Applicant: Koichiro Hayashi
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-129840 20090529
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
To provide an internal power supply circuit that supplies a power supply voltage to an internal circuit of a semiconductor device via an internal power supply wiring, the internal power supply circuit includes a plurality of power supply units connected in common to the internal power supply wiring and an internal-power-supply control circuit that selects either activation or deactivation with regard to at least a part of the power supply units.
Public/Granted literature
- US20100301949A1 INTERNAL POWER SUPPLY CIRCUIT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2010-12-02
Information query
