Invention Grant
- Patent Title: Address control circuit and semiconductor memory device
- Patent Title (中): 地址控制电路和半导体存储器件
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Application No.: US12824882Application Date: 2010-06-28
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Publication No.: US08358558B2Publication Date: 2013-01-22
- Inventor: Kyong Ha Lee , Joo Hyeon Lee
- Applicant: Kyong Ha Lee , Joo Hyeon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2009-0109370 20091112
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
An address control circuit is presented for use in reducing a skew in a write operation mode. The address control circuit includes a read column address control circuit and a write column address control circuit. The read column address control circuit is configured to generate a read column address from an address during a first burst period for a read operation mode. The write column address control circuit is configured to generate a write column address from the address during a second burst period for a write operation mode.
Public/Granted literature
- US20110110176A1 ADDRESS CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-05-12
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