Invention Grant
- Patent Title: Transconductance enhanced RF front-end
- Patent Title (中): 跨导增强射频前端
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Application No.: US12693981Application Date: 2010-01-26
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Publication No.: US08358991B2Publication Date: 2013-01-22
- Inventor: Xinyu Chen , Calvin (Shr-Lung) Chen , John Leete
- Applicant: Xinyu Chen , Calvin (Shr-Lung) Chen , John Leete
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H04B1/06
- IPC: H04B1/06

Abstract:
Embodiments of an RF receiver front-end are presented herein. In an embodiment, the RF receiver front-end comprises a transconductance LNA, a passive mixer, and a gm-enhanced common-gate buffer. The transconductance LNA is configured to convert an RF voltage signal to an RF current signal and provide the RF current signal at an output. The passive mixer is coupled to the output of the transconductance LNA and is configured to mix the RF current signal with a local oscillator signal to produce a frequency translated current signal. The gm-enhanced common-gate buffer is configured to receive the frequency translated current signal at an input and convert the frequency translated current signal to a frequency translated voltage signal. In an embodiment, the input of the gm-enhanced common-gate buffer is configured to provide a low input impedance to limit a voltage swing of the frequency translated current signal.
Public/Granted literature
- US20110092180A1 Transconductance Enhanced RF Front-End Public/Granted day:2011-04-21
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