Invention Grant
- Patent Title: Resolving double patterning conflicts
- Patent Title (中): 解决双重图案冲突
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Application No.: US13171530Application Date: 2011-06-29
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Publication No.: US08359556B1Publication Date: 2013-01-22
- Inventor: Rani S. Abou Ghaida , Kanak B. Agarwal
- Applicant: Rani S. Abou Ghaida , Kanak B. Agarwal
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Stephen R. Tkacs; Stephen J. Walder, Jr.; Eustus O. Nelson
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A mechanism is provided for resolving patterning conflicts. The mechanism performs decomposition with stitches at all candidate locations to find the solution with the minimum number of conflicts. The mechanism then defines interactions between a layout of a first mask and a layout of a second mask through design rules, as well as interactions of mask1/mask2 with top and bottom layers (i.e., contacts, vial, etc.). The mechanism then gives the decomposed layout and design rule definition to any existing design rule fixing or layout compaction tool to solve native conflicts. The modified design rules are that same-layer spacing equals spacing of single patterning, different-layer spacing equals spacing of final layout, and layer overlap equals minimum overlap length.
Public/Granted literature
- US20130007674A1 RESOLVING DOUBLE PATTERNING CONFLICTS Public/Granted day:2013-01-03
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