Invention Grant
- Patent Title: Vertical cavity surface emitting laser
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Application No.: US13064788Application Date: 2011-04-15
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Publication No.: US08363687B2Publication Date: 2013-01-29
- Inventor: Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
- Applicant: Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2008-002822 20080110; JP2008-305349 20081128
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.
Public/Granted literature
- US20110194579A1 Vertical cavity surface emitting laser Public/Granted day:2011-08-11
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