Invention Grant
- Patent Title: Generating cut mask for double-patterning process
- Patent Title (中): 生成双图案工艺的切割面具
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Application No.: US12985643Application Date: 2011-01-06
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Publication No.: US08365108B2Publication Date: 2013-01-29
- Inventor: Zachary Baum , Henning Haffner , Scott M. Mansfield
- Applicant: Zachary Baum , Henning Haffner , Scott M. Mansfield
- Applicant Address: US NY Armonk US CA Milpitas
- Assignee: International Business Machines Corporation,Infineon Technologies North America Corporation
- Current Assignee: International Business Machines Corporation,Infineon Technologies North America Corporation
- Current Assignee Address: US NY Armonk US CA Milpitas
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F19/00 ; G03F1/00 ; G21K5/00 ; G06K9/00

Abstract:
Aspects of the invention include a computer-implemented method of designing a photomask. In one embodiment, the method comprises: simulating a first photomask patterning process using a first photomask design to create simulated contours; comparing the simulated contours to a desired design; identifying regions not common to the simulated contours and the desired design; creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.
Public/Granted literature
- US20120180006A1 GENERATING CUT MASK FOR DOUBLE-PATTERNING PROCESS Public/Granted day:2012-07-12
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