Invention Grant
- Patent Title: Accurate alignment for stacked substrates
- Patent Title (中): 堆叠衬底精确对齐
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Application No.: US13083568Application Date: 2011-04-10
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Publication No.: US08365398B2Publication Date: 2013-02-05
- Inventor: Jeng-Jye Shau
- Applicant: Jeng-Jye Shau
- Main IPC: H05K3/36
- IPC: H05K3/36

Abstract:
Using developed photo-resist materials at the side walls of silicon substrates, the preferred embodiments of the present invention improve alignment accuracy of stacked substrates. Such alignment accuracy improves the area efficiency of side-wall connections as well as through-hole connections. The parasitic impedances of stacked substrate connections are also improved.
Public/Granted literature
- US20120186078A1 ACCURATE ALIGNMENT FOR STACKED SUBSTRATES Public/Granted day:2012-07-26
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