Invention Grant
- Patent Title: Film formation method, film formation device, piezoelectric film, piezoelectric device, liquid discharge device and piezoelectric ultrasonic transducer
- Patent Title (中): 成膜方法，成膜装置，压电膜，压电装置，液体排出装置和压电超声换能器
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Application No.: US13443042Application Date: 2012-04-10
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Publication No.: US08366259B2Publication Date: 2013-02-05
- Inventor: Takamichi Fujii , Takayuki Naono , Takami Arakawa
- Applicant: Takamichi Fujii , Takayuki Naono , Takami Arakawa
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2008-293267 20081117; JP2009-185799 20090810
- Main IPC: B41J2/17
- IPC: B41J2/17
Abstract:
When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.
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