Invention Grant
- Patent Title: Methods for preparing silicon germanium alloy nanocrystals
- Patent Title (中): 硅锗合金纳米晶体的制备方法
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Application No.: US12523210Application Date: 2008-01-14
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Publication No.: US08366826B2Publication Date: 2013-02-05
- Inventor: Jonathan Gordon Conn Veinot , Eric James Henderson
- Applicant: Jonathan Gordon Conn Veinot , Eric James Henderson
- Applicant Address: CA Edmonton, Alberta
- Assignee: The Governors of the University of Alberta
- Current Assignee: The Governors of the University of Alberta
- Current Assignee Address: CA Edmonton, Alberta
- Agency: Dinsmore & Shohl LLP
- International Application: PCT/CA2008/000101 WO 20080114
- International Announcement: WO2008/086622 WO 20080724
- Main IPC: C30B7/00
- IPC: C30B7/00
Abstract:
The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.
Public/Granted literature
- US20100068114A1 METHODS FOR PREPARING SILICON GERMANIUM ALLOY NANOCRYSTALS Public/Granted day:2010-03-18
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