Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US12985004Application Date: 2011-01-05
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Publication No.: US08366833B2Publication Date: 2013-02-05
- Inventor: Hiroyuki Makino , Masaru Tanaka
- Applicant: Hiroyuki Makino , Masaru Tanaka
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Heavy Industries
- Current Assignee: Sumitomo Heavy Industries
- Current Assignee Address: JP Tokyo
- Agency: Squire Sanders (US) LLP
- Priority: JP2008-185016 20080716
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; C23C16/00
Abstract:
Provided is a plasma processing apparatus including: an electrostatic chuck configured to hold a substrate inside a vacuum container, a pulse power source configured to apply a pulse having positive and negative polarities as a bias voltage and a controller configured to control the positive and negative polarities of the pulse.
Public/Granted literature
- US20110097510A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2011-04-28
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