Invention Grant
- Patent Title: Substrate treatment method, coating film removing apparatus, and substrate treatment system
- Patent Title (中): 基板处理方法,涂膜去除装置和基板处理系统
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Application No.: US13161185Application Date: 2011-06-15
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Publication No.: US08366872B2Publication Date: 2013-02-05
- Inventor: Kenji Tsutsumi , Junichi Kitano , Osamu Miyahara , Hideharu Kyouda
- Applicant: Kenji Tsutsumi , Junichi Kitano , Osamu Miyahara , Hideharu Kyouda
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-011262 20070122
- Main IPC: C23F1/02
- IPC: C23F1/02

Abstract:
According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.
Public/Granted literature
- US20110240597A1 SUBSTRATE TREATMENT METHOD, COATING FILM REMOVING APPARATUS, AND SUBSTRATE TREATMENT SYSTEM Public/Granted day:2011-10-06
Information query
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