Invention Grant
- Patent Title: Substrate processing method
- Patent Title (中): 基板加工方法
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Application No.: US13023670Application Date: 2011-02-09
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Publication No.: US08367308B2Publication Date: 2013-02-05
- Inventor: Hiroshi Nakamura , Takafumi Niwa , Yuhei Kuwahara , Tadatoshi Tomita
- Applicant: Hiroshi Nakamura , Takafumi Niwa , Yuhei Kuwahara , Tadatoshi Tomita
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2010-029339 20100212; JP2010-266897 20101130
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A substrate processing method includes a first process (step S12 to step S16) of forming a first resist pattern by exposing a substrate having thereon a first resist film to lights, developing the exposed substrate and cleaning the developed substrate; and a second process (step S17 to step S20) of forming a second resist pattern by forming a second resist film on the substrate having thereon the first resist pattern, exposing the substrate having thereon the second resist film to lights, and developing the exposed substrate. A first processing condition is determined based on first data showing a relationship between a first processing condition under which a cleaning process is performed on the substrate in the first process (step S16) and a line width of the second resist pattern, and the first process (step S16) is performed on the substrate under the determined first processing condition.
Public/Granted literature
- US20110200949A1 SUBSTRATE PROCESSING METHOD Public/Granted day:2011-08-18
Information query
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