Invention Grant
- Patent Title: Method for making light emitting diode
- Patent Title (中): 制造发光二极管的方法
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Application No.: US13288234Application Date: 2011-11-03
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Publication No.: US08367447B2Publication Date: 2013-02-05
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Yang Wei , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN201110110764 20110429
- Main IPC: H01L22/00
- IPC: H01L22/00 ; H01L51/40

Abstract:
A method for making a light emitting diode comprises the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is located on the epitaxial growth surface. Third, a first semiconductor layer, an active layer, and a second semiconductor layer is grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is electrically connected to the first semiconductor layer, and a second electrode electrically is connected to the second semiconductor layer.
Public/Granted literature
- US20120276672A1 METHOD FOR MAKING LIGHT EMITTING DIODE Public/Granted day:2012-11-01
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