Invention Grant
- Patent Title: Light emitting system and method of fabricating and using the same
- Patent Title (中): 发光系统及其制造和使用方法
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Application No.: US13031302Application Date: 2011-02-21
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Publication No.: US08367450B2Publication Date: 2013-02-05
- Inventor: Gad Bahir , Dan Fekete , Asaf Albo
- Applicant: Gad Bahir , Dan Fekete , Asaf Albo
- Applicant Address: IL Haifa
- Assignee: Technion Research & Development Foundation Ltd.
- Current Assignee: Technion Research & Development Foundation Ltd.
- Current Assignee Address: IL Haifa
- Priority: IL204122 20100223
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/06 ; H01S5/00
Abstract:
A light emitting system is disclosed. The system comprises an active region having a stack of bilayer quantum well structures separated from each other by barrier layers. Each bilayer quantum well structure is formed of a first layer made of a first semiconductor alloy for electron confinement and a second layer made of a second semiconductor alloy for hole confinement, wherein a thickness and composition of each layer is such that a characteristic hole confinement energy of the bilayer quantum well structure is at least 200 meV.
Public/Granted literature
- US20110254471A1 LIGHT EMITTING SYSTEM AND METHOD OF FABRICATING AND USING THE SAME Public/Granted day:2011-10-20
Information query
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