Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US12718200Application Date: 2010-03-05
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Publication No.: US08367479B2Publication Date: 2013-02-05
- Inventor: Hiroyuki Nakamura , Akira Muto , Nobuya Koike , Atsushi Nishikizawa , Yukihiro Sato , Katsuhiko Funatsu
- Applicant: Hiroyuki Nakamura , Akira Muto , Nobuya Koike , Atsushi Nishikizawa , Yukihiro Sato , Katsuhiko Funatsu
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2009-094648 20090409
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/60

Abstract:
To prevent, in a resin-sealed type semiconductor package, generation of cracks in a die bonding material used for mounting of a semiconductor chip. A semiconductor chip is mounted over the upper surface of a die pad via a die bonding material, followed by sealing with an insulating resin. The top surface of the die pad to be brought into contact with the insulating resin is surface-roughened, while the bottom surface of the die pad and an outer lead portion are not surface-roughened.
Public/Granted literature
- US20100258922A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-10-14
Information query
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