Invention Grant
- Patent Title: Antifuse structure for in line circuit modification
- Patent Title (中): 线路电路改造的防腐结构
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Application No.: US13360203Application Date: 2012-01-27
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Publication No.: US08367483B2Publication Date: 2013-02-05
- Inventor: Terence L. Kane , Michael P. Tenney , Yun-Yu Wang , Keith Kwong Hon Wong
- Applicant: Terence L. Kane , Michael P. Tenney , Yun-Yu Wang , Keith Kwong Hon Wong
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Ian MacKinnon
- Main IPC: H01L21/82
- IPC: H01L21/82

Abstract:
An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
Public/Granted literature
- US20120122280A1 ANTIFUSE STRUCTURE FOR IN LINE CIRCUIT MODIFICATION Public/Granted day:2012-05-17
Information query
IPC分类: