Invention Grant
- Patent Title: Embedded silicon germanium n-type filed effect transistor for reduced floating body effect
- Patent Title (中): 嵌入式硅锗n型场效应晶体管，减少浮体效应
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Application No.: US12551941Application Date: 2009-09-01
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Publication No.: US08367485B2Publication Date: 2013-02-05
- Inventor: Leland Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
- Applicant: Leland Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey W. Sleight
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Fleit Gibbons Gutman Bongini & Bianco PL
- Agent Jose Gutman
- Main IPC: H01L21/84
- IPC: H01L21/84
Abstract:
A method for fabricating a semiconductor device includes forming a gate stack on an active region of a silicon-on-insulator substrate. The active region is within a semiconductor layer and is doped with an p-type dopant. A gate spacer is formed surrounding the gate stack. A first trench is formed in a region reserved for a source region and a second trench is formed in a region reserved for a drain region. The first and second trenches are formed while maintaining exposed the region reserved for the source region and the region reserved for the drain region. Silicon germanium is epitaxially grown within the first trench and the second trench while maintaining exposed the regions reserved for the source and drain regions, respectively.
Public/Granted literature
- US20110049627A1 EMBEDDED SILICON GERMANIUM N-TYPE FILED EFFECT TRANSISTOR FOR REDUCED FLOATING BODY EFFECT Public/Granted day:2011-03-03
Information query
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