A method for manufacturing a semiconductor device according to the present embodiment includes the steps of forming a metallic silicide film on an n-type impurity region and a p-type impurity region made of silicon carbide (SiC), performing ion implantation of phosphorous (P) into the metallic silicide film on the n-type impurity region, performing a first thermal treatment, performing ion implantation of aluminum (Al) into the metallic silicide film on the p-type impurity region, and performing a second thermal treatment at a temperature lower than the first thermal treatment.