Invention Grant
- Patent Title: Integrated circuit with capacitor and method for the production thereof
- Patent Title (中): 具有电容器的集成电路及其制造方法
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Application No.: US12696811Application Date: 2010-01-29
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Publication No.: US08367514B2Publication Date: 2013-02-05
- Inventor: Thomas Goebel , Johann Helneder , Heinrich Körner , Andrea Mitchell , Markus Schwerd , Martin Seck , Holger Torwesten
- Applicant: Thomas Goebel , Johann Helneder , Heinrich Körner , Andrea Mitchell , Markus Schwerd , Martin Seck , Holger Torwesten
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Techn. AG
- Agent Philip Schlazer
- Priority: DE10341059 20030905
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.
Public/Granted literature
- US20100129977A1 INTEGRATED CIRCUIT WITH CAPACITOR AND METHOD FOR THE PRODUCTION THEREOF Public/Granted day:2010-05-27
Information query
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