Invention Grant
- Patent Title: Semiconductor device and semiconductor device manufacturing method
- Patent Title (中): 半导体器件和半导体器件制造方法
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Application No.: US13040318Application Date: 2011-03-04
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Publication No.: US08367539B2Publication Date: 2013-02-05
- Inventor: Daisuke Sakurai
- Applicant: Daisuke Sakurai
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: RatnerPrestia
- Priority: JP2010-074492 20100329
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48
Abstract:
The semiconductor device manufacturing method includes the steps of attaching two or more solder particles on at least one electrode among a plurality of electrodes of an electronic component, arranging the electrode of the electronic component and an electrode of a circuit board so as to oppose each other, abutting the solder particles attached on a surface of the electrode of the electronic component to the electrode of the circuit board and heating the solder particles, and connecting electrically the electrode of the electronic component and the electrode of the circuit board via two or more solder joint bodies made by melting the solder particles.
Public/Granted literature
- US20110233767A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2011-09-29
Information query
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