Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same

Invention Grant

US08367541B2 Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same 有权

Title translation: 适用于铁电存储器的半导体器件及其制造方法

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Patent Title: Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same
Patent Title (中): 适用于铁电存储器的半导体器件及其制造方法
Application No.: US11189866

Application Date: 2005-07-27
Publication No.: US08367541B2

Publication Date: 2013-02-05
Inventor: Kouichi Nagai , Hitoshi Saito , Kaoru Sugawara , Makoto Takahashi , Masahito Kudo , Kazuhiro Asai , Yukimasa Miyazaki , Katsuhiro Sato , Kaoru Saigoh
Applicant: Kouichi Nagai , Hitoshi Saito , Kaoru Sugawara , Makoto Takahashi , Masahito Kudo , Kazuhiro Asai , Yukimasa Miyazaki , Katsuhiro Sato , Kaoru Saigoh
Applicant Address: JP Yokohama
Assignee: Fujitsu Semiconductor Limited
Current Assignee: Fujitsu Semiconductor Limited
Current Assignee Address: JP Yokohama
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2005-099063 20050330
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same

Abstract:

After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, an Al2O3 film is formed.

Abstract(Chinese):

在形成铁电电容器之后，形成连接到铁电电容器的Al布线（导电焊盘）。然后，在Al布线周围形成氧化硅膜和氮化硅膜。此后，作为抑制水分渗透到氧化硅膜中的渗透抑制膜，形成Al 2 O 3膜。

Public/Granted literature

US20060220081A1 Semiconductor device and manufacturing method of the same Public/Granted day:2006-10-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）